EE-SB5【PDF 1/2 页】SENSR OPTO TRANS 5MM REFL SOLDER

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Sheet目录410

[1页]2页

Photomicrosensor (Reflective)

EE-SB5(-B)

Be sure to read Precautions on page 25.

■ Dimensions

Note: All units are in millimeters unless otherwise indicated.

■ Features

? Dust-tight construction.

? With a visible-light intercepting filter which allows objects to be

sensed without being greatly influenced by the light radiated from

fluorescent lamps.

? Mounted with M3 screws.

? Model with soldering terminals (EE-SB5).

Two, 3.2 ± 0.2 dia. holes

Optical axis

? Model with PCB terminals (EE-SB5-B).

■ Absolute Maximum Ratings (Ta = 25 ° C)

9 ± 0.2

11.5 ± 0.2

Four, 0.5

Emitter

Item

Forward current

Pulse forward cur-

rent

Symbol

I F

I FP

Rated value

50 mA

(see note 1)

(see note 2)

7.62 ± 0.3

Four, 0.25

2.54 ± 0.2

EE-SB5

2.54 ± 0.2

EE-SB5-B

Detector

Reverse voltage

Collector–Emitter

V R

V CEO

30 V

voltage

Emitter–Collector

voltage

Collector current

V ECO

I C

---

20 mA

Internal Circuit

Unless otherwise specified, the

Ambient tem-

Collector dissipa-

tion

Operating

P C

Topr

100 mW

(see note 1)

–25 ° C to 80 ° C

tolerances are as shown below.

perature

Storage

Tstg

–30 ° C to 80 ° C

Terminal No.

Name

Anode

Cathode

Collector

Emitter

Dimensions

3 mm max.

3 < mm ≤ 6

6 < mm ≤ 10

10 < mm ≤ 18

18 < mm ≤ 30

Tolerance

± 0.3

± 0.375

± 0.45

± 0.55

± 0.65

Soldering temperature Tsol 260 ° C

(see note 3)

Note: 1. Refer to the temperature rating chart if the ambient temper-

ature exceeds 25 ° C.

2. The pulse width is 10 μ s maximum with a frequency of

100 Hz.

3. Complete soldering within 10 seconds.

■ Electrical and Optical Characteristics (Ta = 25 ° C)

Item

Symbol

Value

Condition

Emitter

Detector

Forward voltage

Reverse current

Peak emission wavelength

Light current

Dark current

Leakage current

V F

I R

λ P

I L

I D

I LEAK

1.2 V typ., 1.5 V max.

0.01 μ A typ., 10 μ A max.

940 nm typ.

200 μ A min., 2,000 μ A max.

2 nA typ., 200 nA max.

2 μ A max.

I F = 30 mA

V R = 4 V

I F = 20 mA

I F = 20 mA, V CE = 10 V

White paper with a reflection ratio of

90%, d = 5 mm (see note)

V CE = 10 V, 0 l x

I F = 20 mA, V CE = 10 V with no reflec-

tion

Collector–Emitter saturated volt- V CE (sat)

age

---

Peak spectral sensitivity wave-

λ P

850 nm typ.

V CE = 10 V

length

Rising time

Falling time

30 μ s typ.

V CC = 5 V, R L = 1 k Ω , I L = 1 mA

Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.

166

EE-SB5(-B) Photomicrosensor (Reflective)

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